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  1. C. Zhang, Y. J. Fan, Q. L. Chen, T. Y. Wang, X. Liu, Q. Li, Y. W. Yin, X. G. Li, NPG Asia Mater., 2019, 11, 76.

  2. Z. W. Chen, W. H. Huang, W. B. Zhao, C. M. Hou, C. Ma, C. C. Liu, H. Y. Sun, Y. W. Yin, X. G. Li, Ultrafast Multilevel Switching in Au/YIG/n-Si RRAM, Adv. Electron. Mater., 2019, 5, 1800418.

  3. Y. J. Fan, C. Zhang, X. Liu, C. Ma, X. G. Zhou, Y. K. Li, Y. W. Yin, X. G. Li, Laser-induced transverse voltage in (111)-oriented TiO1+d epitaxial thin films with cubic structure, Appl. Phys. Lett., 2019, 114, 223901.

  4. Y. J. Fan, C. Zhang, X. Liu, Y. Lin, G. Y. Gao, C. Ma, Y. W. Yin, X. G. Li, Structure and transport properties of titanium oxide (Ti2O, TiO1+d, and Ti3O5) thin films, J. Alloys and Compounds, 2019, 786, 607e613

  5. W. B. Zhao, C. C. Liu, W. C. Huang, C. M. Hou, Z. W. Chen, Z. Luo, Y. W. Yin, X. G. Li, Positive and negative magnetoresistances in Co/Cu/Ni spin valves, Materials Letters, 240 (2019) 124–127

  6. C. M. Hou, Z. W. Bao, H. Y. Sun, Y. W. Yin, X. G. Li, Improved Energy Storage Performance of Nanocomposites with Bi4.2K0.8Fe2O1+δ nanobelts, J. Materiomics, 2019, DOI: 10.1016/j.jmat.2019.04.006

  7. H. L. Duan, P. Guo, C. Wang, H. Tan, W. Hu, W. S. Yan, C. Ma, L. Cai, L. Song, W. H. Zhang, Z. H. Sun, L. J. Wang, W. B. Zhao, Y. W. Yin, X. G. Li, S. Q. Wei, Beating the exclusion rule against the coexistence of robust luminescence and ferromagnetism in chalcogenide monolayers, Nature Comm., 2019, 10, 1584.

  8. J. M. Yan, Z. X. Xu, T. W. Chen, M. Xu, C. Zhang, X. W. Zhao, F. Liu, L. Guo, S. Y. Yan, G. Y. Gao, F. F. Wang, J. X. Zhang, S. N. Dong, X. G. Li, H. S. Luo, W. Y. Zhao, R. K. Zheng, Nonvolatile and Reversible Ferroelectric Control of Electronic Properties of Bi2Te3 Topological Insulator Thin Films Grown on Pb(Mg1/3Nb2/3)O3−PbTiO3 Single Crystals, ACS Appl. Mater. Interfaces, 2019, 11, 9548−9556.

  9. M. Xu, J. M. Yan, L. Guo, H. Wang, Z. X. Xu, MY. Yan, Y. L. Lu, G. Y. Gao, X. G. Li, H. S. Luo, Y. Chai, and R. K. Zheng, Nonvolatile Control of the Electronic Properties of In2−xCrxO3 Semiconductor Films by Ferroelectric Polarization Charge, ACS Appl. Mater. Interfaces, 2019, 11, 32449−32459.

  10. M. Xu, J. M. Yan, T. W. Chen, Z. X. Xu, H. Wang, L. Guo, G. Y. Gao, S. Y. Yan, F. F. Wang, J. X. Zhang, W. Y. Zhao, X. G. Li, H. S. Luo, R. K. Zheng, Room-Temperature Reversible and Nonvolatile Tunability of Electrical Properties of Cr-Doped In2O3 Semiconductor Thin Films Gated by Ferroelectric Single Crystal and Ionic Liquid, Adv. Electron. Mater., 2019, 5, 1900212.

  11. J. M. Yan, M. Xu, T. W. Chen, M. M. Yang, F. Liu, H. Wang, L. Guo, Z. X. Xu, F. Y. Fan, G. Y. Gao, S. N. Dong, X. G. Li, H. S. Luo, W. Y. Zhao, R. K. Zheng, Manipulation of the Electronic Transport Properties of Charge-Transfer Oxide Thin Films of NdNiO3 Using Static and Electric-Field-Controllable Dynamic Lattice Strain, Phys. Rev. Appl., 2019, 11, 034037

  12. X. Liu; C. Ma; C. M. Hou; Q. L. Chen; R. Sinclair; H. D. Zhou; Y. W. Yin ; X. G. Li, Structural, magnetic and dielectric properties of BaFe2Se3 crystals, EPL(Europhysics Letters), 2019, 126,27005