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  1. S. Ding, J. H. Jia, B. Xu, Z. Z. Dai, Y. W. Wang, S. C. Shen, Y. W. Yin, X. G. Li, Overrated energy storage performances of dielectrics seriously affected by fringing effect and parasitic capacitance, Nat. Commun., 2025, 16, 1-9.

  2. Z. M. Cheng, H. Wang, Z. Y. Guan, Z. X. Zhu, S. C. Shen, Y. W. Yin, X. G. Li, Implementation of multiply accumulate operation and convolutional neural network based on ferroelectric tunnel junction memristors, ACS. Appl. Mater. Interfaces., 2025, 17, 21440-21447.

  3. Y. C. Wang, J. C. Li, H. S. Zhu, H. F. Bu, X. Z. Du, S. C. Shen, Y. W. Yin, X. G. Li, Simultaneously achieving hign-k and strong ferroelectricity in  Hf0.5Zr0.5O2 thin film by structural stacking desig, J. Materiomics., 2025, 11, 101016.

  4. A. W. Xie, Z. Y. Yu, J. W. Lei, Y. Zhang, A. Tian, X. W. Jiang, X. C. Xie, Y. W. Yin, Z. Q. Fu, X. G. Li, R. Z. Zuo, Superior Capacitive Energy Storage of BaTiO3-Based Polymorphic Relaxor Ferroelectrics Engineered by Mesoscopically Chemical Homogeneity, Adv.Sci., 2025, 12, 250916.

  5. X. M. Pan, E. Q. Xue, W. G. Li, W. J. Pan, D. Y. Yao, X. Zhang, Y. W. Yin, P. Cheng, Q. J. Liu, J. F. Ding, Structural and electrical properties of HfO2 at high pressure,  Phys. Rev. B., 2025, 111, 115104.

  6. Y. X. Li, H. Gan, B. Xu, H. Y. Zhang, S. C. Shen, Y. W. Yin, X. G. Li, First-principles study on ferroelectricity in monolayer BaTiO3, Phys. Rev. B., 2025, 111, 214114.

  7. Y. Z. Z. Lu, Z. Y. Guan, B. Xu, S. C. Shen, Y. W. Yin, X. G. Li, Hf0.5Zr0.5O2‑Based Ferroelectric Tunnel Junction as an Artiffcial Synapse for Speech Recognition, ACS. Appl. Mater. Interfaces., 2025, 17, 29847-29854.

  8. X. Z. Du, H. S. Zhu, S. C. Shen, Y. W. Yin, X. G. Li, Enhancement of both dielectric and ferroelectric performances in TiN/Al2O3/Hf1-xZrxO2/TiO2/TiN -based 3D capacitors, Transactions of  Materials Research, 2025, 1, 100068.

  9. J. C. Li, W. J. Pan, Z. X. Zhu, H. S. Zhu, Y. C. Wang, S. C. Shen, Y. W. Yin, X. G. Li, Reduced coercive field and enhanced ferroelectric polarization of Hf0.5Zr0.5O2film through electric-field-assisted rapid annealing,  J. Materiomics., 2025, 11, 101061.

  10. J. Y. Gu, H. Y. Zhang, W. J. Pan, H. F. Bu, Z. J. Shen, S. C. Shen, Y. W. Yin, X. G. Li,Improved ferroelectricity in Mn-doped HfO2(111) epitaxial thin films through controlled doping and substrate orientation, Chin. Phys. B., 2025, 34, 087701.

  11. J. H. Jia, S. Ding, Y. W. Wang, Y. R. Liu, S. C. Shen, L. Shi, D. S. Song, Y. W. Yin, X. G. Li. Excellent Capacitive Energy Storage Performance in Organic Relaxor Ferroelectric PVDC Films, Adv. Funct. Mater., 2025, e02358. 

  12. Y. C. Tu, Z. Y. Guan, H. F. Bu, W. T. Jin, Z. J. Shen, F. F. Pei, Y. L. Gan, H. Y. Zhang, Z. X. Zhu, Q. Li, Z. L. Liao, S. C. Shen, Y. W. Yin, X. G. Li, Programmable Logic and Reservoir Computing Based on Hydrogenation-Engineered Spin-Orbit Torque, Adv. Funct. Mater., 2025, e19753.