研究人员
 
 



          沈胜春

            中国科学技术大学特任研究员、博士生导师

            地址：中国科学技术大学物质科研楼C309室

            E-mail: scshen@ustc.edu.cn



一、教育和科研经历       

2006-2010

学士(物理)，天津师范大学

2011-2016博士(凝聚态物理)，北京师范大学
2016-2021博士后，清华大学物理系
2021-2022助理研究员，清华大学物理系
2022-今特任研究员，中国科学技术大学


二、研究方向和学术贡献        


        目前研究方向：磁电耦合和多铁性材料、自旋电子学、强关联功能氧化物薄膜。        

        主要研究成果：近年来，主要在功能氧化物材料的物性调控、材料设计及信息存储功能等相关方面开展研究，并取得了一定进展，相关成果已发表在Nat. Mater. Phys. Rev. X, PNAS, Nat. Common., Adv. Mater.等期刊上。取得的主要创新成果有：1）发展调控物性新策略：离子调控策略。利用场控质子化方法在铁磁金属氧化物薄膜中实现场控磁性相变；在顺磁金属氧化物薄膜中诱导出铁磁性并揭示电磁关联特性；拓展离子调控策略应用在绝缘体氧化钨、镍基超导薄膜、二维拓扑材料单晶等材料体系实现物态调控。2）提出离子调控材料基元氧多面体的材料设计新方法，创制出铁磁、电极化、金属性共存的磁电耦合新材料，发现本征非互易电阻效应和抗强场鲁棒性的拓扑磁结构。3）构筑了可硅基兼容、具有非破坏信息读取的铁电隧道结，实现了超快操作速度、低写入电流等综合性能优异的非易失存储器原型。


三、主要科研项目          



2024-2027国家自然科学基金面上项目（项目负责人）
2022-2025国家重点研发计划（子课题负责人）
2023-2024中科大青年创新基金（项目负责人） 
2022-2024
清华大学新型陶瓷与精细工艺国家重点实验室开放基金（项目负责人）
2023-2025
国家自然科学基金原创专项（项目骨干）
2020-2021国家自然科学基金青年基金（项目负责人）


四、代表性论文  (ORCID: https://orcid.org/0000-0002-7307-2473） 


         (#共同一作，*通讯作者) 

                    

  1. Zijian Wang, Zeyu Guan, He Wang, Xiang Zhou, Jiachen Li, Shengchun Shen*, Yuewei Yin, Xiaoguang Li*, Pure ZrO2 Ferroelectric Thin Film for Nonvolatile Memory and Neural Network Computing, ACS Appl. Mater. Interfaces (2024). DOI:https://doi.org/10.1021/acsami.4c01234

  2. Jianbing Zhang#, Shengchun Shen#, Danilo Puggioni#, Meng Wang#, Haozhi Sha#, Xueli Xu, Yingjie Lyu, Huining Peng, Wandong Xing, Lauren N. Walters, Linhan Liu, Yujia Wang, De Hou, Chuanying Xi, Li Pi, Hiroaki Ishizuka, Yoshinori Kotani, Motoi Kimata, Hiroyuki Nojiri, Tetsuya Nakamura, Tian Liang, Di Yi, Tianxiang Nan, Jiadong Zang, Zhigao Sheng, Qing He, Shuyun Zhou, Naoto Nagaosa, Ce-Wen Nan, Yoshinori Tokura, Rong Yu*, James M. Rondinelli*, Pu Yu*, A correlated ferromagnetic polar metal by design. Nature Materials (2024). DOI: https://doi.org/10.1038/s41563-024-01856-6

  3. He Wang, Zeyu Guan, Jiachen Li, Zhen Luo, Xinzhe Du, Zijian Wang, Haoyu Zhao, Shengchun Shen*, Yuewei Yin*, Xiaoguang Li*, Silicon-Compatible Ferroelectric Tunnel Junctions with A SiO2/Hf0.5Zr0.5O2 Composite Barrier as Low-Voltage and Ultra-High-Speed Memristors. Advanced Materials 36, 2211305 (2024). DOI: https://doi.org/10.1002/adma.202211305

  4. Yiwei Wang, Zhiwei Bao, Song Ding, Jiangheng Jia, Zhizhan Dai, Yaoxin Li, Shengchun Shen*, Songchao Chu, Yuewei Yin*, Xiaoguang Li*, γ‐Ray Irradiation Significantly Enhances Capacitive Energy Storage Performance of Polymer Dielectric Films. Advanced Materials 36, 2308597 (2024). DOI: https://doi.org/10.1002/adma.202308597

  5. Jiachen Li, He Wang, Xinzhe Du, Zhen Luo, Yuchen Wang, Weiping Bai, Xingsong Su, Shengchun Shen*, Yuewei Yin*, Xiaoguang Li. High endurance (>1012) via optimized polarization switching ratio for Hf0.5Zr0.5O2-based FeRAM. Applied Physics Letter 122, 082901 (2023). DOI: https://doi.org/10.1063/5.0131355

  6. Shengchun Shen*, Meng Wang, Yang Zhang, Yingjie Lyu, Di Tian, Chang Gao, Youwen Long, Jin Zhao, Pu Yu*. Coexistence of Both Localized Electronic States and Electron Gas at Rutile TiO2 Surfaces. Advanced Materials 35, 2301453 (2023). DOI: https://doi.org/10.1002/adma.202301453

  7. Xin-Zhe Du, Zhen Luo, Sheng-Chun Shen*, Wei-Ping Bai, Hui Gan, Yue-Wei Yin, Xiao-Guang Li*. High-κ Hf0.3Zr0.7O2 film with morphotropic phase boundary for DRAM capacitor by controlling H2O dose. Applied Surface Science 638, 158078 (2023). DOI: https://doi.org/10.1016/j.apsusc.2023.158078

  8. Yuchen Wang, Si Liu, Zhen Luo, Hui Gan, He Wang, Jiachen Li, Xinzhe Du, Haoyu Zhao, Shengchun Shen*, Yuewei Yin, Xiaoguang Li. Ultralow subthreshold swing of a MOSFET caused by ferroelectric polarization reversal of Hf0.5Zr0.5O2 thin films. ACS Applied Materials & Interfaces 15, 42764 (2023). DOI: https://doi.org/10.1021/acsami.3c08163

  9. Xiang Zhou, Haoyang Sun, Jiachen Li, Xinzhe Du, He Wang, Zhen Luo, Zijian Wang, Yue Lin, Shengchun Shen*, Yuewei Yin*, Xiaoguang Li. A flexible Hf0.5Zr0.5O2 thin film with highly robust ferroelectricity. Journal of Materiomics 10, 210 (2023). DOI: https://doi.org/10.1016/j.jmat.2023.05.010

  10. Hui Gan, Shengchun Shen*, Yaoxin Li, Yuewei Yin, Xiaoguang Li*. Performance manipulation of ferroelectric tunnel junctions via oxygen vacancies in barrier. Acta Materialia 255, 119101 (2023). DOI: https://doi.org/10.1016/j.actamat.2023.119101

  11. Xiang Ding#, Shengchun Shen#, Huaqian Leng, Minghui Xu, Yan Zhao, Junrui Zhao, Xuelei Sui, Xiaoqiang Wu, Haiyan Xiao, Xiaotao Zu, Bing Huang, Huiqian Luo, Pu Yu, Liang Qiao*. Stability of superconducting Nd0.8Sr0.2NiO2 thin films. Science China Physics, Mechanics & Astronomy 65, 267411 (2022). DOI: https://doi.org/10.1007/s11433-021-1871-x

  12. Shengchun Shen, Zhuolu Li, Zijun Tian, Weidong Luo*, Satoshi Okamoto*, Pu Yu*. Emergent ferromagnetism with Fermi-liquid behavior in proton intercalated CaRuO3. Physical Review X, 11, 021018 (2021). DOI: https://doi.org/10.1103/PhysRevX.11.021018

  13. Di Tian#, Zhiwei Liu#, Shengchun Shen#, *, Zhuolu Li, Yu Zhou, Hongquan Liu, Hanghui Chen*, Pu Yu*. Manipulating Berry curvature of SrRuO3 thin films via epitaxial strain. Proceedings of the National Academy of Sciences, 118, e2101946118 (2021). DOI: https://doi.org/10.1073/pnas.210194611

  14. Zhuolu Li#, Shengchun Shen#, Zijun Tian#, Kyle Hwangbo#, Meng Wang, Yujia Wang, F Michael Bartram, Liqun He, Yingjie Lyu, Yongqi Dong, Gang Wan, Haobo Li, Nianpeng Lu, Jiadong Zang, Hua Zhou, Elke Arenholz, Qing He, Luyi Yang*, Weidong Luo*, Pu Yu*. Reversible manipulation of the magnetic state in SrRuO3 through electric-field controlled proton evolution. Nature Communications 11, 184 (2020). DOI: https://doi.org/10.1038/s41467-019-13999-1

  15. Haoxiong Zhang#, Awabaikeli Rousuli#, Shengchun Shen#, Kenan Zhang, Chong Wang, Laipeng Luo, Jizhang Wang, Yang Wu, Yong Xu, Wenhui Duan, Hong Yao, Pu Yu*, Shuyun Zhou*. Enhancement of superconductivity in organic-inorganic hybrid topological materials. Science Bulletin 65, 188 (2020). DOI: https://doi.org/10.1016/j.scib.2019.11.021

  16. Meng Wang#, Shengchun Shen#, Jinyang Ni, Nianpeng Lu, Zhuolu Li, Hao‐Bo Li, Shuzhen Yang, Tianzhe Chen, Jingwen Guo, Yujia Wang, Hongjun Xiang, Pu Yu*. Electric-Field Controlled Phase Transformation in WO3 Thin Films through Hydrogen Evolution. Advanced Materials 29, 1703628 (2017). DOI: https://doi.org/10.1002/adma.201703628

  17. Shengchun Shen#, Ying Xing#, Pengjie Wang#, Haiwen Liu, Hailong Fu, Yangwei Zhang, Lin He, XC Xie, Xi Lin*, Jiacai Nie*, Jian Wang*. Observation of quantum Griffiths singularity and ferromagnetism at the superconducting LaAlO3/SrTiO3(110) interface. Physical Review B 94, 144517 (2016). DOI: https://doi.org/10.1103/PhysRevB.94.144517

  18. S. C. Shen,B. B. Chen, H. X. Xue, G. Cao, C. J. Li, X. X. Wang, Y. P. Hong, G. P. Guo, R. F. Dou, C. M. Xiong, L. He and J. C. Nie*. Gate dependence of upper critical field in superconducting (110) LaAlO3/SrTiO3 interface. Scientific Reports 6, 28379 (2016). DOI: https://doi.org/10.1038/srep28379

  19. Sheng-Chun Shen, Yan-Peng Hong, Cheng-Jian Li, Hong-Xia Xue, Xin-Xin Wang, Jia-Cai Nie*. In-plane anisotropy in two-dimensional electron gas at LaAlO3/SrTiO3(110) interface. Chinese Physics B 25, 076802 (2016). DOI: https://doi.org/10.1088/1674-1056/25/7/076802

  20. Yin-Long Han#, Sheng-Chun Shen#, Jie You, Hai-Ou Li, Zhong-Zhong Luo, Cheng-Jian Li, Guo-Liang Qu, Chang-Min Xiong, Rui-Fen Dou, Lin He, Don Naugle, Guo-Ping Guo, Jia-Cai Nie*. Two-dimensional superconductivity at (110) LaAlO3/SrTiO3 interfaces. Applied Physics Letter 105, 192603 (2014). DOI: https://doi.org/10.1063/1.4901940