J. C. Li, H. Wang, X. Z. Du, Z. Luo, Y. C. Wang, W. P. Bai, X. S. Su, S. C. Shen, Y. W. Yin, X. G. Li, High endurance (>10¹²) via optimized polarization switching ratio for Hf_0.5Zr_0.5O₂-based FeRAM, Appl. Phys. Lett., 2023, 122, 082901.

Z. W. Bao, S. Ding, Z. Z. Dai, Y. W. Wang, J. H. Jia, S. C. Shen, Y. W. Yin, X. G. Li, Significantly enhanced high-temperature capacitive energy storage in cyclic olefin copolymer dielectric films via ultraviolet irradiation, Mater. Horiz., 2023.

S. Ding, Z. W. Bao, Y. W. Wang, Z. Z. Dai, J. H. Jia, S. C. Shen, Y. W. Yin, X. G. Li, Excellent high-temperature dielectric energy storage of flexible all-organic polyetherimide/poly(arylene ether urea) polymer blend films, J. Power Sources., 2023, 570, 233053.

Z. Luo, X. Z. Du, H. Gan, Y. Lin, W. S. Yan, S. C. Shen, Y. W. Yin, X. G. Li, 5.1 Å EOT and low leakage TiN/Al₂O₃/Hf_0.5Zr_0.5O₂/Al₂O₃/TiN heterostructure for DRAM capacitor, Appl. Phys. Lett., 2023, 122(19).

H. Gan, S. C. Shen, Y. X. Li, Y. W. Yin, X. G. Li, Performance manipulation of ferroelectric tunnel junctions via oxygen  vacancies in barrier, Acta Mater., 2023, 119101.

X. Zhou, H. Y. Sun, J. C. Li, Y. Lin, X. Z. Du, H. Wang, Z. Luo, Z. J. Wang, Y. Lin, S. C. Shen, Y. W. Yin, X. G. Li, A flexible Hf_0.5Zr_0.5O₂ thin film with highly robust ferroelectricity, J. Materiomics., 2023.

X. Z. Du, L. Zhen, S. C. Shen, W. P. Bai, H. Gan, Y. W. Yin, X. G. Li, High-κ Hf_0.3Zr_0.7O₂ Film with Morphotropic Phase Boundary for DRAM Capacitor by Controlling H₂O Dose, Appl. Surf. Sci., 2023, 158078.

Y. C. Wang, S. Liu, Z. Luo, H. Gan, H. Wang, J. C. Li, X. Z. Du, H. Y. Zhao, S. C. Shen, Y. W. Yin, X. G. Li, Ultralow Subthreshold Swing of a MOSFET Caused by Ferroelectric Polarization Reversal of Hf_0.5Zr_0.5O₂ Thin Films, ACS Appl. Mater. Interfaces., 2023, 15(36): 42764-42773.