Weichuan Huang, Yue-Wen Fang, Yuewei Yin, Bobo Tian, Wenbo Zhao, Chuangming Hou, Chao Ma, Qi Li, Evgeny Y. Tsymbal, Chun-Gang Duan, and Xiaoguang Li, Solid-state Synapse Based on Magnetoelectrically Coupled Memristor, ACS Appl. Mater. Interfaces, 10, 5649-5656 (2018).

Wenbo Zhao, Weichuan Huang, Chuanchuan Liu, Chuangming Hou, Zhiwei Chen, Yuewei Yin, and Xiaoguang Li, Electric Field Controlled Non-volatile Magnetization Rotation and Magnetoresistance Effect in Co/Cu/Ni Spin Valves on Piezoelectric Substrates, ACS Appl. Mater. Interfaces, 10, 21390-21397 (2018).

Shiheng Liang, Zhongwei Yu, Xavier Devaux, Anthony Ferri, Weichuan Huang, Huaiwen Yang, Rachel Desfeux, Xiaoguang Li, Sylvie Migot, Debapriya Chaudhuri, Hongxin Yang, Mairbek Chshiev, Changping Yang, Bin Zhou, Jinghuai Fang, Stephane Mangin, and Yuan Lu, Quenching of Spin Polarization Switching in Organic Multiferroic Tunnel Junctions by Ferroelectric “Ailing-Channel” in Organic Barrier, ACS Appl. Mater. Interfaces, 10, 30614-30622 (2018).

Rugang Geng, Ram Chandra Subedi, Hoang Mai Luong, Minh Thien Pham, Weichuan Huang, Xiaoguang Li, Kunlun Hong, Ming Shao, Kai Xiao, Lawrence A. Hornak, Tho Duc Nguyen, Effect of electron localization on the effective hyperfine interaction in organic semiconducting polymers, Phys. Rev. Lett., 120, 086602 (2018).

Weichuan Huang, Wenbo Zhao, Zhen Luo, Yuewei Yin, Yue Lin, Chuangming Hou, Bobo Tian, Chun-Gang Duan, and Xiao-Guang Li, A High-speed and Low-power Multistate Memory Based on Multiferroic Tunnel Junction, Adv. Electron. Mater., 4, 1700560 (2018).

Shuai Hu, Ke Pei, Baomin Wang, Weixing Xia, Huali Yang, Qingfeng Zhan, Xiaoguang Li, Xincai Liu, and Run-Wei Li, Direct imaging of cross-sectional magnetization reversal in an exchange-biased CoFeB/IrMn bilayer, Phys. Rev. B, 97, 054422 (2018).

Yunjie Fan, Chao Ma, Tianyi Wang, Chao Zhang, Qiaoling Chen, Xiang Liu, Ziqiao Wang, Qi Li, Yuewei Yin and Xiaoguang Li, Quantum superconductor-insulator transition in titanium monoxide thin films with a wide range of oxygen contents, Phys. Rev. B, 98, 064501 (2018).

Xu-Wen Zhao, Guan-Yin Gao, Jian-Min Yan, Lei Chen, Meng Xu, Wei-Yao Zhao, Zhi-Xue Xu, Lei Guo, Yu-Kuai Liu, Xiao-Guang Li, Yu Wang, and Ren-Kui Zheng, Reversible and nonvolatile ferroelectric control of two-dimensional electronic transport properties of ZrCuSiAs-type copper oxyselenide thin films with a layered structure, Phys. Rev. Mater, 2, 055003 (2018).

Yuanjun Yang, Yingxue Yao, Lei Chen, Haoliang Huang, Benjian Zhang, Hui Lin, Zhenlin Luo, Chen Gao,Yalin Lu, Xiaoguang Li, Gang Xiao,Ce Feng,Yonggang Zhao, Controlling the anomalous Hall effect by electric-field-induced piezo-strain in Fe₄₀Pt₆₀/(001)-Pb(Mg_2/3Nb_1/3)_0.67Ti_0.33O₃ multiferroic heterostructures, Appl. Phys. Lett, 112, 033506 (2018).

Meifeng Liu, Yang Zhang, Ling-Fang Lin, Lin Lin, Shengwei Yang, Xiang Li, Yu Wang, Shaozhen Li, Zhibo Yan, Xiuzhang Wang, Xiao-Guang Li, Shuai Dong, and Jun-Ming Liu, Direct observation of ferroelectricity in Ca₃Mn₂O₇ and its prominent light absorption, Appl. Phys. Lett, 113, 022902 (2018).

Yuanjun Yang, Bin Hong, Haoliang Huang, Zhenlin Luo, Chen Gao, Chaoyang Kang, Xiaoguang Li, Enabling magnetoelastic coupling in Ni/VO₂ heterostructure by structural phase transition, J Mater Sci: Mater Electron, 29, 2561–2567 (2018).

Chao Zhang, Feixiang Hao, Xiang Liu, Yunjie Fan, Tianyi Wang, Yuewei Yin, and Xiaoguang Li, Quasi-two-dimensional vortex glass transition and the critical current density in TiO epitaxial thin films, Supercond. Sci. Technol, 31, 015016 (8pp) (2018).

Weichuan Huang, Yukuai Liu, Zhen Luo, Chuangming Hou, Wenbo Zhao, Yuewei Yin, and Xiaoguang Li, Ferroelectric Domain Switching Dynamics and Memristive Behaviors in BiFeO₃-based Magnetoelectric Heterojunctions, J. Phys. D: Appl. Phys, 51, 234005 (2018).

W. C. Huang, Y. W. Yin, X. G. Li, Atomic-scale mapping of interface reconstructions in multiferroic heterostructures, Appl. Phys. Rev., 5(4), 041110 (2018).

Z. X. Xu, J. M. Yan, M. Xu, L. Guo, T. W. Chen, G. Y. Gao, Y. Wang, X. G. Li, H. S. Luo, R. K. Zheng, Electric-field-controllable nonvolatile multilevel resistance switching of Bi_0.93Sb_0.07/PMN-0.29PT (111) heterostructures, Appl. Phys. Lett., 113(22), 223504 (2018).

Z. X. Xu, J. M. Yan, M. Xu, L. Guo, T. W. Chen, G. Y. Gao, S. N. Dong, M. Zheng, J. X. Zhang, Y. Wang, X. G. Li, H. S. Luo, R. K. Zheng, Integration of Oxide Semiconductor Thin Films with Relaxor-Based Ferroelectric Single Crystals with Large Reversible and Nonvolatile Modulation of Electronic Properties, ACS Appl. Mater. Interfaces, 10(38), 32809-32817 (2018).

S. H. Liang, Z. W. Yu, X. Devaux, A. Ferri, W. C. Huang, H. W. Yang, R. Desfeux, X. G. Li, S. Migot, D. Chaudhuri, H. X. Yang, M. Chshiev, C. P. Yang, B. Zhou, J. H. Fang, S. Mangin, Y. Lu, Quenching of Spin Polarization Switching in Organic Multiferroic Tunnel Junctions by Ferroelectric “Ailing-Channel” in Organic Barrier, ACS Appl. Mater. Interfaces, 10(36), 30614-30622 (2018).